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Abstract: Selective lateral etching of the SiGe layers is one of the most critical steps in Gate-All-Around Field-Effect Transistor (GAAFET) fabrication, which is the basis for the formation of an ...
Abstract: This paper proposes a novel 12-bit column-parallel two-step single-slope (SS) analog-to-digital converter (ADC) for high-speed CMOS image sensors. Cooperating with the output offset storage ...
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