Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Public records clearly shows that for the past 25 years, CERN has repeatedly built inadequate FPGA-based Level-1 Triggers, necessitating multiple rebuilds. During the Higgs boson discovery ...
Abstract: In recent years, simulation-based optimization methods for analog integrated circuit design parameters optimization (a.k.a sizing) have attracted extensive research interest. Currently, ...
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