Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Malaysia Semiconductor IC Design Park 2 represents a strategic shift towards higher-value activities such as IC design, ...
Abstract: This manuscript provides a comprehensive review of the design, implementation, and advancements in integrated circuits (ICs) for electrochemical sensing, with a focus on biomedical and ...
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