Abstract: We propose and study numerically a new deep ridge InGaAlAs/InP multi-quantum well (MQW) transistor lasers (TL), in which an n-doped InAlAs layer is inserted below the MQW layer in the device ...
Abstract: Optical networks are subject to everlasting striving for reduced cost, size, weight, power consumption, and continuous demand to increase data bandwidth. Emerging applications like optical ...
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